Diodes


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	SEMICONDUCTOR DEVICES Diodes

	IGBT & SFRD modules

	Diode-thyristor modules

	Thyristors

	Symmetric thyristors (Triacs)

	Reverse switched dynistors

	Diodes

	Rectifier diodes (stud design)

	Rectifier diodes (press pack)

	Rectifier diodes (flange design)

	Rectifier diodes in compacy case

	Avalanche diode

	Fast recovered diodes

	Rotor diodes

	Fast diodes in compact gase

	High voltage rectifier module

	Silicon surge voltage suppressors

	Heatsinks

ROTOR DIODES

Features:

▪ Flange design. Terminals – round copper flange (base plate) and copper pipeCapsule pacages for double sided cooling.
▪ Direct and reverse polarityOptimized for low on-state losses.
▪ Diodes can operate by long time axial centrifugal accelerations up to 4800 g (short time up to 6800 g) in base plate direction and by lateral accelerations up to 500 g


	Type designation

	Symbols and terms

Applications:

▪ Brushless excitation systems of high power electrical machines

Type	V_RRM	I_F(AV) (T_C,°C)	I_TSM _10ms	V_FM /I_FM	V_TO	r_T	R_th(j-c)	T_VJM	F	Gase
Type	V	A	kA	V/A	V	mΩ	°C/W	°C	kN	Gase
B6-200	400-1600	200(100)	6	1.35/628	0.92	0.95	0.06	140	16	FD1
B6-200X	400-1600	200(100)	6	1.35/628	0.92	0.95	0.13	140	16	FD1
D105-630	2000-2800	630(100)	15	1.6/1978	1,00	0.40	0.06	175	16	FD2
D105-630X	2000-2800	630(100)	15	1.6/1978	1.00	0.40	0.06	175	16	FD2

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